Probing residual strain in epitaxial graphene layers on 4H-SiC(0001¯) with Raman spectroscopy (2011)

First Author: Strudwick A
Attributed to:  Proof-of-principle proposal: Developing epitaxial graphene for nanoelectronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3551625

Publication URI: http://dx.doi.org/10.1063/1.3551625

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 5