Temperature dependence of the gain peak in p-doped InAs quantum dot lasers (2011)

First Author: Hutchings M
Attributed to:  Platform Renewal - Optical gain and recombination in structured materials funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3652702

Publication URI: http://dx.doi.org/10.1063/1.3652702

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 15