Doping of GaN1-xAsx with high As content (2011)
Attributed to:
Free-standing zinc-blende (cubic) GaN, AlN and AlGaN layers grown by molecular beam epitaxy
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.3657779
Publication URI: http://dx.doi.org/10.1063/1.3657779
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 9