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The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures (2012)

First Author: Hammersley S

Attributed to: Materials Challenges in GaN-based Light Emitting Structures funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3703062

Publication URI: http://dx.doi.org/10.1063/1.3703062

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 8