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Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon (2012)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4725475

Publication URI: http://dx.doi.org/10.1063/1.4725475

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 11