Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon (2012)
Attributed to:
Gettering of impurities in silicon: delivering quantitative understanding to improve photovoltaics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4725475
Publication URI: http://dx.doi.org/10.1063/1.4725475
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 11