On the nature of the interfacial layer in ultra-thin TiN/LaLuO3 gate stacks (2012)
Attributed to:
High permittivity dielectrics on Ge for end of Roadmap application
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4746790
Publication URI: http://dx.doi.org/10.1063/1.4746790
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 4