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On the nature of the interfacial layer in ultra-thin TiN/LaLuO3 gate stacks (2012)

First Author: Mitrovic I

Attributed to: High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4746790

Publication URI: http://dx.doi.org/10.1063/1.4746790

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 4