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Ultra-high hole mobility exceeding one million in a strained germanium quantum well (2012)

First Author: Dobbie A

Attributed to: Creating Silicon Based Platforms for New Technologies funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4763476

Publication URI: http://dx.doi.org/10.1063/1.4763476

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 17