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The relaxation behaviour of supersaturated iron in single-crystal silicon at 500 to 750 °C (2012)

First Author: Murphy J

Attributed to: Gettering of impurities in silicon: delivering quantitative understanding to improve photovoltaics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4767378

Publication URI: http://dx.doi.org/10.1063/1.4767378

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 11