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Growth and stability of zinc blende MgS on GaAs, GaP, and InP substrates (2013)

First Author: Rajan A

Attributed to: Development of an epitaxial lift-off technique for II-VI semiconductor heterostructures funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4788741

Publication URI: http://dx.doi.org/10.1063/1.4788741

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 3