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On the mechanism of recombination at oxide precipitates in silicon (2013)

First Author: Murphy J

Attributed to: Gettering of impurities in silicon: delivering quantitative understanding to improve photovoltaics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4789858

Publication URI: http://dx.doi.org/10.1063/1.4789858

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 4