On the mechanism of recombination at oxide precipitates in silicon (2013)
Attributed to:
Gettering of impurities in silicon: delivering quantitative understanding to improve photovoltaics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4789858
Publication URI: http://dx.doi.org/10.1063/1.4789858
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 4