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Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section (2013)

First Author: Silvestri M

Attributed to: Novel Sub-Threshold Methodologies for GaN Electronic Devices: A Study of Device Reliability and Degradation Mechanisms funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4793196

Publication URI: http://dx.doi.org/10.1063/1.4793196

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 7