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Highly mismatched N-rich GaN1-xSbx films grown by low temperature molecular beam epitaxy (2013)

First Author: Yu K

Attributed to: Feasibility study of growth by MBE of As doped GaN layers for photoanode applications in hydrogen production by photoelectrochemical water splitting funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4795446

Publication URI: http://dx.doi.org/10.1063/1.4795446

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 10