Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements (2013)
Attributed to:
Novel Sub-Threshold Methodologies for GaN Electronic Devices: A Study of Device Reliability and Degradation Mechanisms
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4816424
Publication URI: http://dx.doi.org/10.1063/1.4816424
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 4