Stability of thin film transistors incorporating a zinc oxide or indium zinc oxide channel deposited by a high rate sputtering process (2009)
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/0268-1242/24/8/085002
Publication URI: http://dx.doi.org/10.1088/0268-1242/24/8/085002
Type: Journal Article/Review
Parent Publication: Semiconductor Science and Technology
Issue: 8