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Effect of growth rate on the threading dislocation density in relaxed SiGe buffers grown by reduced pressure chemical vapour deposition at high temperature (2010)

First Author: Dobbie A

Attributed to: Renaissance Germanium funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/0268-1242/25/8/085007

Publication URI: http://dx.doi.org/10.1088/0268-1242/25/8/085007

Type: Journal Article/Review

Parent Publication: Semiconductor Science and Technology

Issue: 8