Improved vertical MOSFET performance using an epitaxial channel and a stacked silicon-insulator structure (2012)
Attributed to:
Feasibility of Novel Deca-nanometer vertical MOSFETs for low-cost Radio Frequency Application
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/0268-1242/27/6/062002
Publication URI: http://dx.doi.org/10.1088/0268-1242/27/6/062002
Type: Journal Article/Review
Parent Publication: Semiconductor Science and Technology
Issue: 6