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Thickness dependence of the strain, band gap and transport properties of epitaxial In 2 O 3 thin films grown on Y-stabilised ZrO 2 (111) (2011)

First Author: Zhang K

Attributed to: Modelling of Advanced Functional Materials using Terascale Computing funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/0953-8984/23/33/334211

PubMed Identifier: 21813945

Publication URI: http://europepmc.org/abstract/MED/21813945

Type: Journal Article/Review

Parent Publication: Journal of Physics: Condensed Matter

Issue: 33

ISSN: 0953-8984