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Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures. (2012)

First Author: Shah VA

Attributed to: Creating Silicon Based Platforms for New Technologies funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1468-6996/13/5/055002

PubMed Identifier: 27877523

Publication URI: http://europepmc.org/abstract/MED/27877523

Type: Journal Article/Review

Volume: 13

Parent Publication: Science and technology of advanced materials

Issue: 5

ISSN: 1468-6996