Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO 2 on sapphire (2012)

First Author: Vasheghani Farahani S
Attributed to:  Nitride Photovoltaic Materials for Full Spectrum Utilization funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.86.245315

Publication URI: http://dx.doi.org/10.1103/physrevb.86.245315

Type: Journal Article/Review

Parent Publication: Physical Review B

Issue: 24