Nonresonant hydrogen dopants in In(AsN): A route to high electron concentrations and mobilities (2013)
Attributed to:
InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.87.165207
Publication URI: http://dx.doi.org/10.1103/physrevb.87.165207
Type: Journal Article/Review
Parent Publication: Physical Review B
Issue: 16