Statistical variability in 14-nm node SOI FinFETs and its impact on corresponding 6T-SRAM cell design (2012)
Attributed to:
ENIAC MOdeling and DEsign of Reliable, process variation-aware Nanoelectronic devices, circuits and systems (MODERN)
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/essderc.2012.6343346
Publication URI: http://dx.doi.org/10.1109/essderc.2012.6343346
Type: Conference/Paper/Proceeding/Abstract
ISBN: 978-1-4673-1707-8