📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Statistical variability in 14-nm node SOI FinFETs and its impact on corresponding 6T-SRAM cell design (2012)

First Author: Wang X

Attributed to: ENIAC MOdeling and DEsign of Reliable, process variation-aware Nanoelectronic devices, circuits and systems (MODERN) funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/essderc.2012.6343346

Publication URI: http://dx.doi.org/10.1109/essderc.2012.6343346

Type: Conference/Paper/Proceeding/Abstract

ISBN: 978-1-4673-1707-8