The benefit of GaN characteristics over LDMOS for linearity improvement using drain modulation in power amplifier system (2011)
Attributed to:
Holistic Design of Power Amplifiers for Future Wireless Systems
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/inmmic.2011.5773334
Publication URI: http://dx.doi.org/10.1109/inmmic.2011.5773334
Type: Conference/Paper/Proceeding/Abstract
ISBN: 978-1-4577-0650-9