📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Computational modelling of electrical field intensity for high voltage semiconductor package design (2010)

First Author: Nobeen N

Attributed to: New Thyristors for T & D Applications (NEWTON) funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/isapm.2010.5441380

Publication URI: http://dx.doi.org/10.1109/isapm.2010.5441380

Type: Conference/Paper/Proceeding/Abstract

ISBN: 978-1-4244-6756-3