A design methodology for maximizing the voltage gain of strained Si MOSFETs using the thickness of the silicon-germanium strain relaxed buffer as a design parameter (2009)

First Author: Alatise O
Attributed to:  Platform: Strained Si / SiGe: Materials, Technology and Design funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/isdrs.2009.5378304

Publication URI: http://dx.doi.org/10.1109/isdrs.2009.5378304

Type: Conference/Paper/Proceeding/Abstract

ISBN: 978-1-4244-6030-4