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A Theoretical Comparison of the Breakdown Behavior of $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$ and InP Near-Infrared Single-Photon Avalanche Photodiodes (2009)

First Author: Liew Tat Mun S

Attributed to: Novel InGaAs/InAlAs travelling wave avalanche photodiode for ultra high speed photonic applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/jqe.2009.2013094

Publication URI: http://dx.doi.org/10.1109/jqe.2009.2013094

Type: Journal Article/Review

Parent Publication: IEEE Journal of Quantum Electronics

Issue: 5