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Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes (2011)

First Author: Ker P

Attributed to: Ultra high detectivity single carrier multiplication InAs avalanche photodiodes for IR optical detection funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/jqe.2011.2159194

Publication URI: http://dx.doi.org/10.1109/jqe.2011.2159194

Type: Journal Article/Review

Parent Publication: IEEE Journal of Quantum Electronics

Issue: 8