Quantum Well and Dot Self-Aligned Stripe Lasers Utilizing an InGaP Optoelectronic Confinement Layer (2009)
Attributed to:
Advanced GaAs Based Laser Fabrication (Feasibility Study)
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/jstqe.2008.2011654
Publication URI: http://dx.doi.org/10.1109/jstqe.2008.2011654
Type: Journal Article/Review
Parent Publication: IEEE Journal of Selected Topics in Quantum Electronics
Issue: 3