Origin of Temperature-Dependent Threshold Current in p-Doped and Undoped In(Ga)As Quantum Dot Lasers (2008)

First Author: Smowton P
Attributed to:  Platform Renewal - Optical gain and recombination in structured materials funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/jstqe.2008.920040

Publication URI: http://dx.doi.org/10.1109/jstqe.2008.920040

Type: Journal Article/Review

Parent Publication: IEEE Journal of Selected Topics in Quantum Electronics

Issue: 4