Improved Performance of GaAs-Based Terahertz Emitters via Surface Passivation and Silicon Nitride Encapsulation (2011)

First Author: Headley C

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/jstqe.2010.2047006

Publication URI: http://dx.doi.org/10.1109/jstqe.2010.2047006

Type: Journal Article/Review

Parent Publication: IEEE Journal of Selected Topics in Quantum Electronics

Issue: 1