Temperature-Dependent Threshold Current in InP Quantum-Dot Lasers (2011)
Attributed to:
InP / AlGaInP Quantum Dot Lasers for 650-780nm Emission
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/jstqe.2011.2115235
Publication URI: http://dx.doi.org/10.1109/jstqe.2011.2115235
Type: Journal Article/Review
Parent Publication: IEEE Journal of Selected Topics in Quantum Electronics
Issue: 5