Origin of the Asymmetry in the Magnitude of the Statistical Variability of n- and p-Channel Poly-Si Gate Bulk MOSFETs (2008)

First Author: Asenov A
Attributed to:  Meeting the design challenges of the nano-CMOS electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2008.2000843

Publication URI: http://dx.doi.org/10.1109/led.2008.2000843

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 8