Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers (2009)
Attributed to:
Novel Time-Resolved Thermal Imaging: AlGaN/GaN Heterostructure Field Effect Transistors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2008.2010340
Publication URI: http://dx.doi.org/10.1109/led.2008.2010340
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
Issue: 2