Direct Measurement of MOSFET Channel Strain by Means of Backside Etching and Raman Spectroscopy on Long-Channel Devices (2010)

First Author: Agaiby R
Attributed to:  Platform: Strained Si / SiGe: Materials, Technology and Design funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2010.2043496

Publication URI: http://dx.doi.org/10.1109/led.2010.2043496

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 5