Simulation Study of Dominant Statistical Variability Sources in 32-nm High- $\kappa$/Metal Gate CMOS (2012)

First Author: Wang X
Attributed to:  Atomic Scale Simulation of Nanoelectronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2012.2188268

Publication URI: http://dx.doi.org/10.1109/led.2012.2188268

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 5