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Statistical Variability and Reliability and the Impact on Corresponding 6T-SRAM Cell Design for a 14-nm Node SOI FinFET Technology (2013)

First Author: Wang X

Attributed to: Atomic Scale Simulation of Nanoelectronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/mdat.2013.2266395

Publication URI: http://dx.doi.org/10.1109/mdat.2013.2266395

Type: Journal Article/Review

Parent Publication: IEEE Design & Test

Issue: 6