Statistical Variability and Reliability and the Impact on Corresponding 6T-SRAM Cell Design for a 14-nm Node SOI FinFET Technology (2013)
Attributed to:
Atomic Scale Simulation of Nanoelectronic Devices
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/mdat.2013.2266395
Publication URI: http://dx.doi.org/10.1109/mdat.2013.2266395
Type: Journal Article/Review
Parent Publication: IEEE Design & Test
Issue: 6