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Statistical variability in n-channel UTB-FD-SOI MOSFETs under the influence of RDF, LER, MGG and PBTI (2011)

First Author: Markov S

Attributed to: Atomic Scale Simulation of Nanoelectronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/soi.2011.6081680

Publication URI: http://dx.doi.org/10.1109/soi.2011.6081680

Type: Conference/Paper/Proceeding/Abstract

ISBN: 978-1-61284-761-0