Statistical variability in n-channel UTB-FD-SOI MOSFETs under the influence of RDF, LER, MGG and PBTI (2011)
Attributed to:
Atomic Scale Simulation of Nanoelectronic Devices
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/soi.2011.6081680
Publication URI: http://dx.doi.org/10.1109/soi.2011.6081680
Type: Conference/Paper/Proceeding/Abstract
ISBN: 978-1-61284-761-0