Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy (2008)
Attributed to:
Novel Time-Resolved Thermal Imaging: AlGaN/GaN Heterostructure Field Effect Transistors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2007.913005
Publication URI: http://dx.doi.org/10.1109/ted.2007.913005
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 2