Analysis of Threshold Voltage Distribution Due to Random Dopants: A 100 000-Sample 3-D Simulation Study (2009)
Attributed to:
Meeting the design challenges of the nano-CMOS electronics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2009.2027973
Publication URI: http://dx.doi.org/10.1109/ted.2009.2027973
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 10