Performance Enhancements in Scaled Strained-SiGe pMOSFETs With $ \hbox{HfSiO}_{x}/\hbox{TiSiN}$ Gate Stacks (2009)
Attributed to:
Platform: Strained Si / SiGe: Materials, Technology and Design
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2009.2028375
Publication URI: http://dx.doi.org/10.1109/ted.2009.2028375
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 10