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Improved Analog Performance in Strained-Si MOSFETs Using the Thickness of the Silicon–Germanium Strain-Relaxed Buffer as a Design Parameter (2009)

First Author: Alatise O

Attributed to: Platform: Strained Si / SiGe: Materials, Technology and Design funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2009.2030721

Publication URI: http://dx.doi.org/10.1109/ted.2009.2030721

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 12