Improved Analog Performance in Strained-Si MOSFETs Using the Thickness of the Silicon–Germanium Strain-Relaxed Buffer as a Design Parameter (2009)
Attributed to:
Platform: Strained Si / SiGe: Materials, Technology and Design
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2009.2030721
Publication URI: http://dx.doi.org/10.1109/ted.2009.2030721
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 12