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Simulation of Statistical Aspects of Charge Trapping and Related Degradation in Bulk MOSFETs in the Presence of Random Discrete Dopants (2010)

First Author: Bukhori M

Attributed to: Atomic Scale Simulation of Nanoelectronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2010.2041859

Publication URI: http://dx.doi.org/10.1109/ted.2010.2041859

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 4