Self-Aligned Silicidation of Surround Gate Vertical MOSFETs for Low Cost RF Applications (2010)
Attributed to:
Feasibility of Novel Deca-nanometer vertical MOSFETs for low-cost Radio Frequency Application
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2010.2082293
Publication URI: http://dx.doi.org/10.1109/ted.2010.2082293
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 12