Drain Current Collapse in Nanoscaled Bulk MOSFETs Due to Random Dopant Compensation in the Source/Drain Extensions (2011)
Attributed to:
Meeting the design challenges of the nano-CMOS electronics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2011.2152845
Publication URI: http://dx.doi.org/10.1109/ted.2011.2152845
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 8