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Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors (2011)

First Author: Martinez A

Attributed to: Atomic Scale Simulation of Nanoelectronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2011.2157929

Publication URI: http://dx.doi.org/10.1109/ted.2011.2157929

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 8