📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs (2012)

First Author: Uren M

Attributed to: Novel Sub-Threshold Methodologies for GaN Electronic Devices: A Study of Device Reliability and Degradation Mechanisms funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2012.2216535

Publication URI: http://dx.doi.org/10.1109/ted.2012.2216535

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 12