Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs (2012)
Attributed to:
Novel Sub-Threshold Methodologies for GaN Electronic Devices: A Study of Device Reliability and Degradation Mechanisms
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2012.2216535
Publication URI: http://dx.doi.org/10.1109/ted.2012.2216535
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 12